Ion-implanted laser-annealed GaAs solar cells
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11), 780-782
- https://doi.org/10.1063/1.90671
Abstract
Conversion efficiencies up to 12% at AM1 have been obtained for ion‐implanted laser‐annealed (IILA) GaAs solar cells utilizing a shallow‐homojunction n+/p/p+ structure without a GaAlAs window. The n+ layer was formed by Se+‐ion implantation into the p layer, which was grown epitaxially by chemical vapor deposition on a single‐crystal p+ substrate. The implanted layer was annealed, without encapsulation, by scanning with a cw Nd : YAG laser. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer.Keywords
This publication has 8 references indexed in Scilit:
- p-n junction formation in boron-deposited silicon by laser-induced diffusionApplied Physics Letters, 1978
- Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiationApplied Physics Letters, 1978
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Simplified fabrication of GaAs homojunction solar cells with increased conversion efficienciesApplied Physics Letters, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978