Correlation between Infrared-Light Scattering and Absorption Images in an In-Doped LEC GaAs Crystal
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A), L316-318
- https://doi.org/10.1143/jjap.25.l316
Abstract
Infrared light scattering tomography combined with infrared absorption imaging is developed for characterization of semi-insulating GaAs crystals to take simultaneously both the IR absorption and light scattering images. Very close correlation of many dislocation lines and point defects was found between these images in a semi-insulating In-doped LEC GaAs crystal grown from a stoichiometric melt, while a few dislocation lines showed only light scattering of 1.15 µm laser beam.Keywords
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