Arsenic precipitation at dislocations in GaAs substrate material
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5), 2556-2560
- https://doi.org/10.1063/1.327979
Abstract
High‐resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å‐diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi‐insulating, p‐type, and n‐type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.Keywords
This publication has 15 references indexed in Scilit:
- Microscopy Of Semi‐Insulating Gallium ArsenideJournal of Microscopy, 1980
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978
- A review of etching and defect characterisation of gallium arsenide substrate materialThin Solid Films, 1976
- Electron microscope study of electrically active impurity precipitate defects in siliconPhilosophical Magazine, 1974
- Interdependence of strain, precipitation, and dislocation formation in epitaxial Se-doped GaAsJournal of Applied Physics, 1974
- The nature of defects inn+ gallium arsenidePhilosophical Magazine, 1974
- A simple rotating jet-thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductorsJournal of Physics D: Applied Physics, 1973
- A dislocation „etch-memory” effect in gallium arsenidePhysica Status Solidi (a), 1973
- Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O SystemJournal of the Electrochemical Society, 1971
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965