Low-temperature annealing behavior of GaAs implanted with Be
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2), 178-180
- https://doi.org/10.1063/1.91027
Abstract
Ion implantation of Be into GaAs, followed by annealing at temperatures above 475 °C, produces layers with strong p‐type conductivity and high hole mobility. Maximum electrical activation of the Be is obtained by 550 °C. Be appears to be the only dopant in GaAs which can be electrically activated at such low temperatures following implantation. At temperatures in the range 500–630 °C, satisfactory electrical results can be obtained by annealing in argon or vacuum without encapsulation. Little change in the electrical properties occurs for subsequent encapsulated annealing at temperatures up to 800 °C for the fluences used.Keywords
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