Ion mixing and phase diagrams
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 97-105
- https://doi.org/10.1016/0167-5087(83)90787-1
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Comparison of ion beam mixing at room temperature and 40 KNuclear Instruments and Methods, 1981
- Ion bombardment induced interface mixing in the AgSi systemNuclear Instruments and Methods, 1981
- Ion-beam mixing of metal-semiconductor eutectic systemsNuclear Instruments and Methods, 1981
- Microalloying by ion-beam mixingNuclear Instruments and Methods, 1981
- Ion beam mixing in amorphous silicon I. Experimental investigationNuclear Instruments and Methods, 1981
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Formation of Si-enriched metastable compounds in the Pt-Si system using ion bombardment and post annealingPhysics Letters A, 1979
- Induced interface interactions in Ti/Si systems by ion implantationJournal of Vacuum Science and Technology, 1979
- Ion-induced silicide formation in niobium thin filmsRadiation Effects, 1979
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976