Epitaxial vapor growth of gallium antimonide
- 1 May 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 9, 151-157
- https://doi.org/10.1016/0022-0248(71)90224-7
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 6 references indexed in Scilit:
- Epitaxial Vapor Growth of Gallium AntimonideJapanese Journal of Applied Physics, 1970
- Sheet Resistivity of the Epitaxially Grown Germanium LayerJapanese Journal of Applied Physics, 1968
- GaSb Prepared from Nonstoichiometric MeltsJournal of the Electrochemical Society, 1966
- Ion-pairing between lithium and the residual acceptors in GaSbJournal of Physics and Chemistry of Solids, 1965
- Thermochemistry of antimonyPhysica, 1964
- An investigation into the apparent purity limit in GaSbJournal of Physics and Chemistry of Solids, 1964