Characterization of ion-beam-sputtered molybdenum films on N-type silicon
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (3-4), 339-349
- https://doi.org/10.1016/0040-6090(83)90575-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Effect of ion-beam sputter damage on Schottky barrier formation in siliconApplied Physics Letters, 1981
- Electron-Beam-Induced Currents in SemiconductorsAnnual Review of Materials Science, 1981
- Process conditions affecting hot electron trapping in dc magnetron sputtered MOS devicesJournal of Vacuum Science and Technology, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Electrical Defects in Silicon Introduced by Sputtering and Sputter‐EtchingJournal of the Electrochemical Society, 1980
- Electrical characteristics of sputtering-induced defects in n-type siliconVacuum, 1978
- 2.2 Substrate surface damages by rf-sputteringVacuum, 1977
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodesSolid-State Electronics, 1976
- Penetration and energy-loss theory of electrons in solid targetsJournal of Physics D: Applied Physics, 1972