Electrical and structural characteristics of laser-induced epitaxial layers in silicon
- 15 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (6), 447-449
- https://doi.org/10.1063/1.91167
Abstract
We have used pulsed‐laser radiation to growhomoepitaxialp‐n junctions in silicon.Dopedamorphous silicon was deposited on (100) and (111) silicon substrates and annealed with a Q‐switched ruby laser. By this technique, perfect epitaxial layers with good electrical characteristics and controlled dopant profiles can be achieved. The technique can potentially be competitive with or replace ion implantation for many semiconductor‐device applications.Keywords
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