Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial silicon
- 10 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2), 100-102
- https://doi.org/10.1063/1.102115
Abstract
We characterize the behavior of electroluminescence from a sulfur‐related impurity complex in a p‐n junction formed in epitaxial silicon. The spectrum of the electroluminescence matches that of previously reported photoluminescence from sulfur impurities and persists to ∼150 K. In our structure, we find that the electroluminescence exhibits an external quantum efficiency of 0.2–0.5%.Keywords
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