89-GHz f/sub T/ room-temperature silicon MOSFETs
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (5), 256-258
- https://doi.org/10.1109/55.145045
Abstract
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 AA, and a channel length of 0.15 mu m. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region.<>Keywords
This publication has 10 references indexed in Scilit:
- Physics and technology of ultra short channel MOSFET devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 0.1 mu m-gate elevated source and drain MOSFET fabricated by phase-shifted lithographyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-frequency performance of submicrometer channel-length silicon MOSFETsIEEE Electron Device Letters, 1991
- A deep-submicrometer microwave/digital CMOS/SOS technologyIEEE Electron Device Letters, 1991
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Inverter performance of deep-submicrometer MOSFETsIEEE Electron Device Letters, 1988
- High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length levelIEEE Electron Device Letters, 1988
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987