GaAs-Ga1-xAlxAs double-heterostructure injection lasers with distributed Bragg reflectors
- 15 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (10), 596-598
- https://doi.org/10.1063/1.88577
Abstract
Laser oscillation in injection‐pumped GaAs‐Ga1−xAlxAs double‐heterostructure distributed Bragg reflector (DBR) lasers is reported. Current threshold density as low as 890 A/cm2 in pulsed operation has been obtained at 183 °K. In this laser diode, the corrugations are placed outside the active part of the laser in the form of an end pair of parallel Bragg reflectors. The observed characteristics of the DBR lasers are found to agree well with the theory.Keywords
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