Integrated Pb-perovskite dielectrics for science and technology
- 1 October 1992
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 135 (1), 117-130
- https://doi.org/10.1080/00150199208230017
Abstract
The critical requirements for thin film dielectric materials (ferroelectric and/or paraelectric) in niche technological areas (i.e., non-volatile memories, ULSI DRAMS and decoupling capacitors) are first considered. Next, the rationale for the need of epitaxial single crystal Pb-based ferroelectric perovskite thin films to address key scientific issues is outlined. These topics are followed by discussions on the recent progress (in our labortory) and future prospects on the chemical processing and properties of Pb-perovskite thin films. Finally, some thoughts on Professor Von Hippel's philosophy that will lead the field to advances into the threshold of the 21st century are echoed.Keywords
This publication has 25 references indexed in Scilit:
- Ceramic and Glass‐Ceramic Packaging in the 1990sJournal of the American Ceramic Society, 1991
- Nanostructure Evolution During the Transition of TiO2, PbTiO3 and PZT from GELS to Crystalline thin Films.MRS Proceedings, 1991
- The effect of ionizing radiation on sol-gel ferroelectric PZT capacitorsIEEE Transactions on Nuclear Science, 1990
- Nanostructure Evolution During Processing of Thin-Film Gels: A High-Resolution Electron Microscopic Study. 2. The Thin-Film Gel Derived From Pb(Zr0.45Ti0.55)O2(OR)2MRS Proceedings, 1990
- Preparation and Properties of PZT Thin Films by Metal Alkoxides-DEA MethodJournal of the Ceramic Society of Japan, 1990
- Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film CapacitorsMRS Proceedings, 1990
- Ferroelectric MemoriesScience, 1989
- Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric PropertiesJapanese Journal of Applied Physics, 1987
- Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rf-planar magnetron sputteringJournal of Applied Physics, 1986
- A Ceramic Capacitor Substrate for High Speed Switching VLSI ChipsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1982