High-power, low-threshold, single-mode GaInAsP/InP laser by low-temperature, single-step liquid phase epitaxy
- 15 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4), 328-330
- https://doi.org/10.1063/1.95257
Abstract
A GaInAsP/InP laser (λg=1.3 μm) on grooved substrate with a lens‐shaped active layer, in which the current blocking junction is grown exclusively outside of the groove, has been fabricated by single‐step liquid phase epitaxy. This technique is based on the preferential growth effects of InP and GaInAsP on the (100) oriented substrate with [011̄] directed grooves. Under cw operation, low threshold current (38 mA), high output power (40 mW/facet), and high external differential quantum efficiency (56%) are accomplished; fundamental transverse mode operation up to an output of 30 mW/facet is verified. These successful characteristics are realized by the introduction of the inner current confining layer.Keywords
This publication has 8 references indexed in Scilit:
- Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 μm) lasersApplied Physics Letters, 1983
- High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxyApplied Physics Letters, 1983
- Transverse mode stabilized InGaAsP/InP (λ = 1.3 µm) piano-convex waveguide lasersIEEE Journal of Quantum Electronics, 1981
- V-grooved substrate buried heterostructure InGaAsP/InP laserElectronics Letters, 1981
- Remote arbitrating of a resourceElectronics Letters, 1981
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm WavelengthJapanese Journal of Applied Physics, 1980
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasersJournal of Applied Physics, 1980
- InGaAsP/InP buried crescent laser emitting at 1.3 μm with very low threshold currentElectronics Letters, 1980