Growth of AlxIn1−xN single crystal films by microwave-excited metalorganic vapor phase epitaxy
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4), 462-466
- https://doi.org/10.1016/0022-0248(94)00464-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Method for Determination of Rotational Viscosity in Nematic Liquid CrystalsJapanese Journal of Applied Physics, 1994
- Microhardness of Indium Nitride Single Crystal FilmsJapanese Journal of Applied Physics, 1994
- Thermal stability of indium nitride single crystal filmsJournal of Applied Physics, 1993
- Chemical Etching of Indium NitrideJournal of the Electrochemical Society, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Properties of Ga1-xInxN Films Prepared by MOVPEJapanese Journal of Applied Physics, 1989
- Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPEJournal of the Electrochemical Society, 1986
- Pseudopotential band structure of indium nitridePhysical Review B, 1986
- RF sputtering of AlxIn1−xN thin filmsPhysica Status Solidi (a), 1981
- Band Structure and Reflectivity of GaNPhysica Status Solidi (b), 1974