Silicon-ion implantation in InP and annealing with CVD SiO2 encapsulation

Abstract

Silicon‐ion implantation in semi‐insulating Fe‐doped InP has been investigated. Chemical vapor deposited (CVD) SiO₂ encapsulation film for annealing of the Si‐implanted layer has been investigated by Auger electron analysis. It indicated that by selecting deposition condition, CVD SiO₂ films can be used effectively as an annealing encapsulant of InP. The electrical activation of 80% was realized at 750 °C annealing for doses ranging from 6×10¹² to 3×10¹⁴ cm⁻² at 350 keV. Depth profiles after annealing were found to be close to the Lindhard‐Scharff‐Schiott (LSS) theory, with no redistribution of implanted Si by the annealing process. Anomalous behavior in activation efficiency was found at relatively low doses of the order of 10¹² cm⁻², and it is considered to be due to compensation by Fe in the substrate.