Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy
- 10 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (24), 2561-2563
- https://doi.org/10.1063/1.103817
Abstract
Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C‐H complexes. At the lower C concentrations (19 cm−3) the CAs‐H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.Keywords
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