Schottky diodes with high breakdown voltages
- 31 May 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5), 491-493
- https://doi.org/10.1016/0038-1101(83)90106-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- High gain power switching using field controlled thyristorsSolid-State Electronics, 1982
- Electrical properties of a triode-like silicon vertical-channel JFETIEEE Transactions on Electron Devices, 1980
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970