Growth and optical characterization of InAs1−xSbx(0≤x≤1) on GaAs and on GaAs-coated Si by molecular beam epitaxy
- 30 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (18), 1856-1858
- https://doi.org/10.1063/1.102187
Abstract
Epitaxial layers of InAs1−xSbx(0≤x≤1) have been grown on GaAs and on GaAs‐coated Si substrates by molecular beam epitaxy using tetrameric Sb and dimeric As sources. Room‐temperature transmission spectroscopy was used to measure the optical band gap of the InAs1−xSbx layers and the composition was determined by x‐ray wavelength dispersive spectroscopy. We obtained shiny morphology InAs1−xSbx layers on GaAs‐coated Si, comparable to those grown on GaAs. Our results are very encouraging towards the monolithic integration of InAs1−xSbx long‐wavelength infrared detectors with Si charge‐coupled devices.Keywords
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