Implanted oxygen in NiSi formation
- 16 August 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 66 (2), 773-778
- https://doi.org/10.1002/pssa.2210660244
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A Xe marker study of the transformation of Ni2Si to NiSi in thin filmsPhysica Status Solidi (a), 1981
- Alteration of Ni silicide formation by N implantationApplied Physics Letters, 1981
- On the formation of Ni and Pt silicide first phase: The dominant role of reaction kineticsApplied Physics Letters, 1978
- The formation of NiSi from Ni2Si studied with a platinum markerThin Solid Films, 1978
- Low-concentration oxygen depth profiling by the 16O(d, α)14N reactionNuclear Instruments and Methods, 1978
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Silicide formation in Ni-Si Schottky barrier diodesJournal of Physics D: Applied Physics, 1976
- Effect of Oxidizing Ambients on Platinum Silicide Formation: II . Auger and Backscattering AnalysesJournal of the Electrochemical Society, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Cross sections for the O16(d, p0)O17, O16(d, p1O17∗ and O16(d, α0)N14 reactions from 0.8 to 1.7 MeVNuclear Physics, 1964