Gas source Si-MBE
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4), 46-51
- https://doi.org/10.1016/0022-0248(90)90337-k
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- Disilane gas source Si-MBEJournal of Crystal Growth, 1989
- Silicon molecular beam epitaxy: 1984–1986Journal of Crystal Growth, 1987
- Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon FilmsJapanese Journal of Applied Physics, 1985
- The surface chemistry of the thermal cracking of silane on silicon (111)Surface Science, 1984
- Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon SystemJournal of the Electrochemical Society, 1984
- Gigabit logic bipolar technology: advanced super self-aligned process technologyElectronics Letters, 1983
- Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1Physical Review B, 1976
- Silicon homoepitaxial thin films via silane pyrolysis: A HEED and Auger electron spectroscopy studySurface Science, 1972
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967