Electron spin resonance in electron-irradiated 3C-SiC
- 1 November 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (9), 4529-4531
- https://doi.org/10.1063/1.343920
Abstract
Electron‐irradiation‐induced defects in epitaxially grown 3C‐SiC crystals have been studied by electron‐spin‐resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of 2.0029±0.0001. Isochronal and isothermal annealing of electron‐irradiated 3C‐SiC showed that this center was annealed at three stages (150, 350, and 750 °C) and that the 750 °C stage exhibited first‐order reaction with an activation energy of 2.2±0.3 eV.Keywords
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