Electrical Properties and Resonance Scattering in Heavily Doped n-Type GaSb and Related Semiconductors

Abstract

Data are presented of the resistivity ρ and Hall coefficient R_H vs temperature T from 4.2°K to room temperature for seven n‐type moderately heavily Te‐doped samples of GaSb. The ρ‐vs‐T curve shapes are similar at low temperatures to those previously measured on n‐GaAs and n‐InAs, and they are presumably caused by the same near‐resonance scattering mechanism as proposed earlier to explain the n‐GaAs and n‐InAs results. An unusual rise in the low‐temperature mobility with increasing carrier concentration in the n‐GaSb samples can also apparently be understood on the basis of the near‐resonance scattering model.