Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector
- 1 September 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (9), 1121-1123
- https://doi.org/10.1109/68.531809
Abstract
We report on a 1.5-/spl mu/m vertical-cavity laser that utilizes one GaInAsP-InP and one Si-SiO/sub 2/ mirror in combination with a strain-compensated GaInAsP quantum-well active layer. Pulsed lasing operation was achieved in a temperature range from -160 to +43/spl deg/C. The lasers exhibit 30-mA pulsed threshold current at room temperature. CW operation was obtained up to -25/spl deg/C.Keywords
This publication has 14 references indexed in Scilit:
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- Pulsed electrical operation of 1.5-μm vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1995
- Low-threshold 1.57-μm VC-SEL's using strain-compensated quantum wells and oxide/metal backmirrorIEEE Photonics Technology Letters, 1995
- Double-fused 1.52-μm vertical-cavity lasersApplied Physics Letters, 1995
- Fabrication of 1.5 μm optically pumped
Ga In As P InP vertical-cavity surface-emitting lasersMaterials Science and Engineering B, 1994 - Morphological modifications during selective growth of InP around cylindrical and parallelepiped mesasMaterials Science and Engineering B, 1994
- Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasersJournal of Crystal Growth, 1994
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrorsIEEE Journal of Quantum Electronics, 1992
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser DiodeJapanese Journal of Applied Physics, 1990