Low-threshold 1.57-μm VC-SEL's using strain-compensated quantum wells and oxide/metal backmirror
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (5), 444-446
- https://doi.org/10.1109/68.384504
Abstract
We present an electrically-pumped long wavelength vertical cavity surface-emitting laser (VC-SEL) using strain-compensated multiple quantum well gain medium and an oxide/metal backmirror. Design flexibilities such as using oxide/metal mirrors are possible because of the exceedingly high optical gain provided by strain-compensated multiple quantum wells. The gain medium is bonded to various substrates, including InP and Si, prior to device processing. This substrate transfer process facilitates heat sinking, and can be useful in the integration of VC-SEL's with other devices. The device operates at a single wavelength of 1.57 /spl mu/m, and has a minimum threshold of 12 mA at room temperature under pulse pumping.Keywords
This publication has 11 references indexed in Scilit:
- Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wellsIEEE Photonics Technology Letters, 1994
- Photopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wellsApplied Physics Letters, 1994
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layerIEEE Photonics Technology Letters, 1994
- Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasersIEEE Photonics Technology Letters, 1993
- Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangementApplied Physics Letters, 1993
- Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasersApplied Physics Letters, 1993
- Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasersApplied Physics Letters, 1991
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser DiodeJapanese Journal of Applied Physics, 1990
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 [micro sign]m diameter core silica fibreElectronics Letters, 1990