Fabrication of 1.5 μm optically pumped Ga 1−xIn xAs yP 1−y/InP vertical-cavity surface-emitting lasers
- 31 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 28 (1), 289-292
- https://doi.org/10.1016/0921-5107(94)90066-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- High temperature photopumping of 1.55 μm vertical cavity surface emitting lasersElectronics Letters, 1993
- 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substratesApplied Physics Letters, 1992
- Reduction of sidewall roughness during dry etching of SiO2Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectorsElectronics Letters, 1991