Oxidation of silicon (oxy)nitride and nitridation of silicon dioxide: Manifestations of the same chemical reaction system?
- 1 December 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 193-194, 665-674
- https://doi.org/10.1016/0040-6090(90)90217-2
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Rapid thermal nitridation of SiO2 filmsApplied Surface Science, 1989
- ONO technologyApplied Surface Science, 1989
- Oxidation of plasma enhanced chemical vapour deposited silicon nitride and oxynitride filmsApplied Surface Science, 1989
- Thermal oxidation of silicon nitride and silicon oxynitride filmsJournal of Vacuum Science & Technology B, 1989
- Hydrogen in oxidized silicon oxynitride thin filmsApplied Surface Science, 1988
- Oxidation behaviour of LPCVD silicon oxynitride filmsApplied Surface Science, 1988
- Hydrogen in low-pressure chemical-vapor-deposited silicon (oxy)nitride filmsJournal of Applied Physics, 1986
- Deposition and composition of silicon oxynitride filmsJournal of Vacuum Science & Technology B, 1983
- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982
- Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia GasJournal of the Electrochemical Society, 1980