Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
- 12 September 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (11), 1388-1390
- https://doi.org/10.1063/1.112060
Abstract
The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of ∼30 meV between the first two states can be deduced from the spectra.Keywords
This publication has 11 references indexed in Scilit:
- Preparation and analysis of the negative resistance characteristic in an amorphous silicon and silicon–carbide single-barrier deviceApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growthSemiconductor Science and Technology, 1993
- Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)Applied Physics Letters, 1993
- Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wellsApplied Physics Letters, 1992
- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Density of states of quantum dots and crossover from 3D to Q0D electron gasSemiconductor Science and Technology, 1992
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991
- Electronic structure and photoexcited-carrier dynamics in nanometer-size CdSe clustersPhysical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990