Performance analysis of sub-micron gate GaAs MESFETs
- 30 June 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (6), 643-654
- https://doi.org/10.1016/0038-1101(87)90224-3
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A temperature model for the GaAs MESFETIEEE Transactions on Electron Devices, 1981
- Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximationsJournal of Applied Physics, 1981
- Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting componentsSolid-State Electronics, 1980
- Saturation mechanism in 1-µm gate GaAs FET with channel—Substrate interfacial barrierIEEE Transactions on Electron Devices, 1980
- Electron dynamics in nearly pinched-off GaAs field effect transistor operationApplied Physics Letters, 1980
- Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamicsJournal of Applied Physics, 1980
- Drain conductance of junction gate FET's in the hot electron rangeIEEE Transactions on Electron Devices, 1976
- Two-dimensional particle models in semiconductor-device analysisElectronics Letters, 1974
- A two-dimensional numerical FET model for DC, AC, and large-signal analysisIEEE Transactions on Electron Devices, 1973
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970