An improved anodic oxide insulator for InP metal-insulated-semiconductor field-effect transistors

Abstract

Highly insulation oxide layers have been anodically grown on InP. The oxide was grown in an electrolyte of pH20₃ to dissolve out of the growing oxide layer, resulting in a P₂O₅/In₂O₃ ratio larger than one. The increase in oxide resistivity is attributed to the high concentration of P₂O₅ in the layers, since the P₂O₅ has a large band gap.