Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6R), 778
- https://doi.org/10.1143/jjap.23.778
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Frequency Response of the Strong Inversion Layer in a Silicon WaferJapanese Journal of Applied Physics, 1983
- Techniques for improving the Si–SiO2 interface characterizationJournal of Applied Physics, 1983
- A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac PhotovoltagesJapanese Journal of Applied Physics, 1983
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon BeamJapanese Journal of Applied Physics, 1982
- A Novel Method of Electron Beam Recording on a Si WaferJapanese Journal of Applied Physics, 1981
- Si and GaAs photocapacitive MIS infrared detectorsJournal of Applied Physics, 1980
- Frequency dependence of photo-EMF of strongly inverted Ge and Si MIS structures—II experimentsSolid-State Electronics, 1975
- Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. TheorySolid-State Electronics, 1975
- Temperature Dependence of Inversion-Layer Frequency Response in SiliconBell System Technical Journal, 1967
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965