Frequency Response of the Strong Inversion Layer in a Silicon Wafer
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12R)
- https://doi.org/10.1143/jjap.22.1893
Abstract
Equations for the inversion capacitance and inversion conductance are proposed. These equations introduce an independent response time-constant. By applying these equations to a metal-oxide-Si diode, the diode capacitance equation is derived. This equation well explains both frequency and bias voltage dependencies of the diode capacitance. A time-constant of 0.21 s is obtained for a previous experiment applying this equation.Keywords
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