A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAs
- 1 May 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 88 (4), 455-464
- https://doi.org/10.1016/0022-0248(88)90144-3
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Plasma stimulated MOCVD of GaAsJournal of Crystal Growth, 1986
- Ultraviolet induced metal-organic chemical vapor deposition growth of GaAsJournal of Vacuum Science & Technology A, 1986
- Vacuum chemical epitaxy utilizing organometallic sourcesJournal of Electronic Materials, 1986
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAsJapanese Journal of Applied Physics, 1985
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVDJapanese Journal of Applied Physics, 1983
- Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga sourceJournal of Crystal Growth, 1981
- Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine SystemJournal of the Electrochemical Society, 1975