Electromigration in Al Films Containing Si
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (11), 476-478
- https://doi.org/10.1063/1.1653779
Abstract
Electromigration‐induced failure in Al films is retarded by the addition of Si. It is then governed by surface diffusion instead of by grain‐boundary diffusion as it is in pure Al films. This is evidenced by activation energies, which were found to be 0.3 eV in Al/Si films and 0.55 eV in Al films. Failure in the Al/Si films is due to void formation in a temperature gradient near the cathode, whereas in Al films the failure mode is void formation at structural inhomogeneities.Keywords
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