Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition
- 4 June 1999
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 11 (7), 1712-1718
- https://doi.org/10.1021/cm980760x
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Passivation of Cu by Sputter‐Deposited Ta and Reactively Sputter‐Deposited Ta‐Nitride LayersJournal of the Electrochemical Society, 1998
- Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applicationsMaterials Science and Engineering: R: Reports, 1998
- Crystallographic and morphological characterization of reactively sputtered Ta, TaN and TaNO thin filmsThin Solid Films, 1997
- High-temperature ceramic pressure sensorSensors and Actuators A: Physical, 1997
- Study of nanocrystalline Ta(N,O) diffusion barriers for use in Cu metallizationMicroelectronic Engineering, 1997
- Effect of interface on coupling of NiFeCo/TaN/NiFeCo sandwich filmsIEEE Transactions on Magnetics, 1997
- Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallizationApplied Physics Letters, 1995
- Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin filmsChemistry of Materials, 1993
- Interdiffusions in Cu/reactive-ion-sputtered TiN, Cu/chemical-vapor-deposited TiN, Cu/TaN, and TaN/Cu/TaN thin-film structures: Low temperature diffusion analysesJournal of Applied Physics, 1992