Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor
- 1 April 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (7), 2663-2669
- https://doi.org/10.1063/1.337897
Abstract
This article describes an experimental study which compares compositionally graded to abrupt emitter-base junctions which are used in the heterojunction bipolar transistor (HBT). It is found that the larger current gains are obtained in devices with abrupt emitter-base junctions. Measurements of electroluminescence emitted from the base region and temperature-dependent current gain indicate that the larger current gain in the abrupt devices is due to a larger base-transport factor. The data presented provide evidence that the injection of hot electrons from an abrupt emitter-base junction is realizable and can result in improved performance of the HBT.Keywords
This publication has 5 references indexed in Scilit:
- Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristicsIEEE Transactions on Electron Devices, 1985
- Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1985
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift MotionJapanese Journal of Applied Physics, 1985
- Optimum emitter grading for heterojunction bipolar transistorsApplied Physics Letters, 1983
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982