Reply to ’’Comment on ’Gettering of mobile oxygen and defect stability within back-surface damage regions in Si’ ’’
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1227-1228
- https://doi.org/10.1063/1.330533
Abstract
It is shown that the macroscopic crack model proposed [H. F. Schaake, J. Appl. Phys. 53, 1224 (1982)] for explaining the enhanced diffusion and redistribution of oxygen is unacceptable and does not constitute an explanation for the long-range (≳120 μm) depletion and diffusion of oxygen occurring at the back surface.Keywords
This publication has 6 references indexed in Scilit:
- Comment on ’’Gettering of mobile oxygen and defect stability within back-surface damage regions in Si’’Journal of Applied Physics, 1982
- Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted SiApplied Physics Letters, 1981
- Thermal redistribution of oxygen during solid-phase regrowth of arsenic-implanted amorphized SiApplied Physics Letters, 1981
- Redistribution of oxygen within damage regions of boron-implanted siliconApplied Physics Letters, 1981
- Gettering of mobile oxygen and defect stability within back-surface damage regions in SiApplied Physics Letters, 1981
- Redistribution of implanted oxygen and carbon in siliconJournal of Applied Physics, 1980