Ion implantation in indium phosphide
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 641-646
- https://doi.org/10.1016/0029-554x(81)90790-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Anodic Oxidation of GaP in N‐methylacetamide for Electrical Profiling of Ion‐Implanted GaPJournal of the Electrochemical Society, 1980
- Pulse electron annealing of ion-implanted InPApplied Physics Letters, 1979
- Beryllium-ion implantation in InP and In1−xGaxAsyP1−yApplied Physics Letters, 1979
- Chemical Vapor Deposition of Silicon Nitride: Encapsulant Layers for Annealing Gallium ArsenideJournal of the Electrochemical Society, 1978
- Annealing of Se-implanted GaAs with an oxygen-free CVD Si3N4 encapsulantJournal of Applied Physics, 1978
- N-type doping of indium phosphide by implantationSolid-State Electronics, 1978
- Ion-implanted n-channel InP metal semiconductor field-effect transistorApplied Physics Letters, 1978
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977