Annealing of Se-implanted GaAs with an oxygen-free CVD Si3N4 encapsulant
- 1 August 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (8), 4571-4573
- https://doi.org/10.1063/1.325472
Abstract
Auger electron spectroscopy and differential Hall measurements have been employed to investigate CVD Si3N4 layers as encapsulants for annealing of Se‐implanted GaAs. Carrier concentrations exceeding 4×1018 cm−3 can be achieved by implanting 100‐keV Se ions into Cr‐doped semi‐insulating GaAs heated at 400 °C and by subsequent annealing at 900 °C using an oxygen‐free CVD Si3N4 encapsulant, in which out‐diffusions of Ga and As are sufficiently depressed.Keywords
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