Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application
- 2 May 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (5), 292-294
- https://doi.org/10.1109/led.2005.846592
Abstract
The resistance switching characteristics of polycrystalline Nb/sub 2/O/sub 5/ film prepared by pulsed-laser deposition (PLD) were investigated for nonvolatile memory application. Reversible resistance-switching behavior from a high resistance state to a lower state was observed by voltage stress with current compliance. The reproducible resistance-switching cycles were observed and the resistance ratio was as high as 50-100 times. The resistance switching was observed under voltage pulse as short as 10 ns. The estimated retention lifetime at 85/spl deg/C was sufficiently longer than ten years. Considering its excellent electrical and reliability characteristics, Nb/sub 2/O/sub 5/ shows strong promise for future nonvolatile memory applications.Keywords
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