The symmetry of the 875 meV Ga-related luminescence band in irradiated silicon
- 24 November 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (33), L889-L893
- https://doi.org/10.1088/0022-3719/17/33/001
Abstract
The authors report the effects of uniaxial stresses on the 875 meV line in irradiated Ga-doped Si. The line is shown to occur at an optical centre with the C2v point group.Keywords
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