Y1Ba2Cu3O6+δ growth on thin Y-enhanced SiO2 buffer layers on silicon
- 28 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (18), 2323-2325
- https://doi.org/10.1063/1.106057
Abstract
SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O6+δ thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O6+δ film growth on silicon with thin buffer layers has shown c orientation and Tc0=78 K.Keywords
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