Thermally induced accumulation of silicon on palladium silicide surfaces as studied by Auger electron spectroscopy
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9), 705-706
- https://doi.org/10.1063/1.91262
Abstract
A clean surface of a palladium silicide grown on a Si(111) plane has been studied by Auger electron spectroscopy. Heat treatment of the silicide in the temperature range 250–600 °C causes the accumulation of a thin layer of elementary Si over its surface. The accumulated thickness has been estimated to be about 3 Å and does not depend on heating temperatures and periods examined.Keywords
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