Slip dislocation formation during cw laser annealing of silicon
- 15 January 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (2), 95-97
- https://doi.org/10.1063/1.92268
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Lattice defects in As-implanted and cw Nd:YAG laser-annealed siliconApplied Physics Letters, 1980
- A new type of source generating misfit dislocationsApplied Physics B Laser and Optics, 1978
- Unidirectional contraction in boron-implanted laser-annealed siliconApplied Physics Letters, 1978
- A simple method for the analysis of dislocation loops by means of the inside-outside contrast on transmission electron micrographsPhysica Status Solidi (a), 1975
- A new preparation method for large area electron-transparent silicon samplesJournal of Physics E: Scientific Instruments, 1975
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970