Direct Observation of the Threshold for Electron Heating in Silicon Dioxide
- 24 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (12), 1284-1286
- https://doi.org/10.1103/physrevlett.56.1284
Abstract
Vacuum-emission and carrier-separation techniques, together with novel metal-oxide-semiconductor structures, have been used to observe the threshold field for the onset of electron heating in silicon dioxide. The magnitude of this electric field is ≅ 1.5-2.0 MV/cm, independent of oxide thickness and composition. This value is consistent with all of the current theoretical calculations. A minimum average electronic energy of ≅ 1.0 eV is shown to be necessary to observe emission of the electrons into vacuum.Keywords
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