Zum Wachstum von AIIIBV‐Halbleitern aus nichtstöchiometrischen Schmelzen (II) Dotierung von GaAs und Ga1−xAlxAs mit Zink
- 1 January 1972
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 7 (11), 1209-1217
- https://doi.org/10.1002/crat.19720071105
Abstract
No abstract availableKeywords
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