Aluminum contact to nickel silicide using a thin tungsten barrier
- 1 May 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 91 (2), 89-98
- https://doi.org/10.1016/0040-6090(82)90422-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Preparation of large-area monocrystalline silicon thin windowsReview of Scientific Instruments, 1980
- Composite Silicide Gate Electrodes - Interconnections for VLSI Device TechnologiesIEEE Journal of Solid-State Circuits, 1980
- Refractory silicides of titanium and tantalum for low-resistivity gates and interconnectsIEEE Transactions on Electron Devices, 1980
- Composite silicide gate electrodes—Interconnections for VLSI device technologiesIEEE Transactions on Electron Devices, 1980
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Aluminum-silicide reactions. I. Diffusion, compound formation, and microstructureJournal of Applied Physics, 1979
- Electron and ion currents relevant to accurate current integration in MeV ion backscattering spectrometryNuclear Instruments and Methods, 1979
- Aluminum/nickel silicide contacts on siliconThin Solid Films, 1978
- Study of Al/Pd2Si contacts on SiJournal of Vacuum Science and Technology, 1977
- Electrical and mechanical features of the platinum silicide-aluminum reactionJournal of Applied Physics, 1973