Annealing Effects on Al and AN-Si Contacts with 3C–SiC
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A), L592
- https://doi.org/10.1143/jjap.25.l592
Abstract
Annealing effects on the current-voltage characteristics of Al and Al–Si contacts with n-type and p-type 3C-SiC films, epitaxially grown on Si by chemical vapor deposition, have been investigated. Al electrodes on n-type 3C-SiC show ohmic characteristics stable up to 400°C, but show distinct rectifying characteristics with annealing at 900°C. To the contrary, Al on p-type 3C-SiC clearly changes from non-ohmic into ohmic with annealing at 900°C. Al–Si alloys, which are usually used as ohmic electrodes for p-type SiC, show same behavior as AN on n-type 3C-SiC. These results suggest the diffused Al atoms to yield a certain p-type layer.Keywords
This publication has 9 references indexed in Scilit:
- Microstructural, chemical, and electrical characterization of the beta silicon carbide thin-film silicon substrate interfaceApplied Physics Letters, 1985
- Schottky barrier diodes on 3C-SiCApplied Physics Letters, 1985
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystalsJournal of Crystal Growth, 1984
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Auger and electron energy-loss study of the Al/SiC interfaceApplied Physics Letters, 1983
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966