Molecular beam epitaxial growth of GaAs and other compound semiconductors
- 1 December 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 205 (2), 182-212
- https://doi.org/10.1016/0040-6090(91)90301-d
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgalliumApplied Physics Letters, 1990
- Atomic layer epitaxy of compound semiconductors with metalorganic precursorsJournal of Crystal Growth, 1989
- Optical properties of high-quality InAlAs/InGaAs SQWs grown by MBE using specially refined In and Al sourcesJournal of Crystal Growth, 1989
- Very high purity GaAs grown by gas source molecular beam epitaxyJournal of Crystal Growth, 1989
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistorsJournal of Crystal Growth, 1987
- Photoluminescence as a diagnostic of semiconductorsProgress in Crystal Growth and Characterization, 1982
- Dynamic measurements on polymer chain dimensions below the θ-temperatureJournal de Physique, 1982
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxyApplied Physics Letters, 1980
- Surface structures and photoluminescence of molecular beam epitaxial films of GaAsSolid-State Electronics, 1971