Photo-Induced ESR in Amorphous Si1-xNx:H Films
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A), L502
- https://doi.org/10.1143/jjap.23.l502
Abstract
A large increase in the spin density for ESR signals originating from Si dangling bonds is observed by illumination at liquid nitrogen temperature for a-Si1-x N x :H films prepared by magnetron-sputtering and glow-discharge-decomposition. The photo-induced ESR can be explained as arising from the following three types of centers; (1) negative U centers which have unpaired spins metastable only under illumination, (2) positive U centers which are converted from negative U centers by illumination and (3) dangling bonds created by a bond-breaking by the intense illumination.Keywords
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