Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates

Abstract

The solid phase epitaxial growth of amorphous Si: B films formed by vacuum evaporation of Si: B alloys has been investigated. It has been found from Rutherford backscattering spectroscopy and transmission electron microscopy that the crystalline quality of the grown layer is excellent even if the boron concentration exceeds the solid solubility limit in thermal equilibrium. It has also been found from nuclear reaction and electrical measurements that the incorporated boron atoms exhibit 100% electrical activity at least up to 2×10²⁰cm^-3 and that the carrier concentration is nearly constant in the layer.